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AS4LC4M4E0 Hoja de datos - Alliance Semiconductor

AS4LC4M4E0 image

Número de pieza
AS4LC4M4E0

componentes Descripción

Other PDF
  no available.

PDF
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page
15 Pages

File Size
255.4 kB

Fabricante
Alliance
Alliance Semiconductor Alliance

Functional description
The AS4LC4M4E0 and AS4LC4M4E1 are high performance 16-megabit CMOS Dynamic Random Access Memories (DRAM) organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and system levels. The Alliance 16Mb DRAM family is optimized for use as main memory in PC, workstation, router and switch applications.


FEATUREs
• Organization: 4,194,304 words × 4 bits
• High speed
    - 50/60 ns RAS access time
    - 25/30 ns column address access time
    - 12/15 ns CAS access time
• Low power consumption
    - Active: 500 mW max
    - Standby: 3.6 mW max, CMOS I/O
• Extended data out
• Refresh
    - 4096 refresh cycles, 64 ms refresh interval for AS4LC4M4E0
    - 2048 refresh cycles, 32 ms refresh interval for AS4LC4M4E1
    - RAS-only or CAS-before-RAS refresh or self-refresh
• TTL-compatible, three-state I/O
• JEDEC standard package
    - 300 mil, 24/26-pin SOJ
• 3V power supply
• Industrial and commercial temperature available

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Número de pieza
componentes Descripción
PDF
Fabricante
ASCEND Semiconductor 4Mx4 EDO
Ver
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ASCEND Semiconductor 4Mx4 EDO
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ASCEND Semiconductor 4Mx4 EDO
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5V 1M×16 CMOS DRAM (EDO)
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5V 1M×16 CMOS DRAM (EDO)
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3V 1M×16 CMOS DRAM (EDO)
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3V 1M×16 CMOS DRAM (EDO)
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5V 256K×16 CMOS DRAM (EDO)
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Alliance Semiconductor

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