Description
The AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers an access time of 70 ns (VCC= 2.7V to 3.6V) and an access time of 55 ns (VCC= 4.5V to 5.5V). The power dissipation over the industrial temperature range with VCC= 2.7V to 3.6V is 72 mW and is 110 mW with VCC= 4.5V to 5.5V.

FEATUREs
• Single Supply for Read and Write: 2.7V to 5.5V
• Fast Read Access Time – 70 ns (VCC= 2.7V to 3.6V); 55 ns (VCC= 4.5V to 5.5V)
• Internal Program Control and Timer
• Flexible Sector Architecture
– One 16K Bytes Boot Sector with Programming Lockout
– Two 8K Bytes Parameter Sectors
– Eight Main Memory Sectors (One 32K Bytes, Seven 64K Bytes)
• Fast Erase Cycle Time – 8 Seconds
• Byte-by-Byte Programming – 10 µs/Byte Typical
• Hardware Data Protection
• DATAPolling or Toggle Bit for End of Program Detection
• Low Power Dissipation
– 20 mA Active Current
– 25 µA CMOS Standby Current for VCC= 2.7V to 3.6V
– 30 µA CMOS Standby Current for VCC= 4.5V to 5.5V
• Minimum 100,000 Write Cycles