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AUIRLR024N Hoja de datos - International Rectifier

AUIRLR024N image

Número de pieza
AUIRLR024N

componentes Descripción

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page
13 Pages

File Size
298.6 kB

Fabricante
IR
International Rectifier IR

Description
Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.


FEATUREs
● Advanced Planar Technology
● Low On-Resistance
● Logic-Level Gate Drive
● Dynamic dV/dT Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *

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Número de pieza
componentes Descripción
PDF
Fabricante
AUTOMOTIVE GRADE
Ver
Infineon Technologies
AUTOMOTIVE GRADE
Ver
International Rectifier
AUTOMOTIVE GRADE
Ver
Infineon Technologies
AUTOMOTIVE GRADE
Ver
International Rectifier
AUTOMOTIVE GRADE
Ver
Infineon Technologies
AUTOMOTIVE GRADE
Ver
International Rectifier
AUTOMOTIVE GRADE
Ver
Infineon Technologies
AUTOMOTIVE GRADE
Ver
Kersemi Electronic Co., Ltd.
AUTOMOTIVE GRADE
Ver
Infineon Technologies
AUTOMOTIVE GRADE
Ver
Kersemi Electronic Co., Ltd.

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