B1430M Hoja de datos - NEC => Renesas Technology
Número de pieza
B1430M
componentes Descripción
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PDF
page
6 Pages
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102.3 kB
Fabricante
NEC => Renesas Technology
The 2SB1430 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment.
In addition, this transistor features a small resin-molded insulation type package, thus contributing to high-density mounting and mounting cost reduction.
FEATURES
• High hFE due to Darlington connection:
hFE ≥ 2,000 (VCE = 2 V, IC = 2 A)
• Mold package that does not require an insulating board or insulation bushing
Número de pieza
componentes Descripción
PDF
Fabricante
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NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
NEC => Renesas Technology
NPN darlington transistor for low-frequency power amplifiers and low-speed switching, 5A, 100V
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
NEC => Renesas Technology
PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING
NEC => Renesas Technology
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