Features
♦ For general purpose applications.
♦ This diode features low turn-on voltage. This device are
   protected by a PN junction guard ring against excessive
   voltage, such as electrostatic discharges
♦ Metal-on-silicon Schottky barrier device which is protected by a
   PN junction guard ring.
♦ The low forward voltage drop and fast switching make it ideal
   for protection of MOS devices, steering, biasing and coupling
   diodes for fast switching and low logic level applications.
♦ This diode is also available in the DO-35 case with type designation BAT86.