Features
• For general purpose applications
• This diode features low turn-on voltage. The
   devices are protected by a PN junction guard ring
   against excessive voltage, such as electrostatic
   discharges.
• Metal-on-silicon Schottky barrier device which is
   protected by a PN junction guard ring.
• The low forward voltage drop and fast switching
   make it ideal for protection of MOS devices,
   steering, biasing and coupling diodes for fast
   switching and low logic level applications
• This diode is also available in a DO-35 case with
   type designation BAT86.