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BB101MAU-TL-E Hoja de datos - Renesas Electronics

BB101M image

Número de pieza
BB101MAU-TL-E

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page
8 Pages

File Size
259 kB

Fabricante
Renesas
Renesas Electronics Renesas

Features
• Built in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)
• Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143Rmod)

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Número de pieza
componentes Descripción
PDF
Fabricante
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
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Built in Biasing Circuit MOS FET IC UHF RF Amplifier
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Built in Biasing Circuit MOS FET IC UHF RF Amplifier
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Renesas Electronics
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
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Renesas Electronics
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
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Renesas Electronics
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
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Renesas Electronics
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