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BD22621G-M Hoja de datos - ROHM Semiconductor

BD22621G-M image

Número de pieza
BD22621G-M

Other PDF
  no available.

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page
26 Pages

File Size
1.9 MB

Fabricante
ROHM
ROHM Semiconductor ROHM

General Description
BD22621G-M is a low on-resistance N-channel MOSFET high-side power switch, optimized for Universal Serial Bus (USB) applications. BD22621G-M is equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start.


FEATUREs
◾ AEC-Q100 Qualified(Note1)
◾ Over Current Threshold: 0.3A
◾ Built-in Low ON-Resistance (Typ 120mΩ)
   N-Channel MOSFET
◾ Reverse Current Protection when
   Power Switch Off
◾ Thermal Shutdown
◾ Under-Voltage Lockout
◾ Open-Drain Error Flag Output
◾ Output Discharge Function
◾ Soft Start Circuit
◾ Control Input Logic : Active-High
   (Note1: Grade2)


APPLICATIONs
   Car accessory, Industrial applications


Número de pieza
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