BD651 Hoja de datos - New Jersey Semiconductor
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BD651
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New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min)
• High DC Current Gain : hFE= 750(Min) @lc= 3A
• Low Saturation Voltage
• Complement to Type BD652
APPLICATIONS
• Designed for use as complementary AF push-pull output stage applications
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