BD951 Hoja de datos - New Jersey Semiconductor
Número de pieza
BD951
componentes Descripción
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2 Pages
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92.2 kB
Fabricante
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
• DC Current Gain-
: hFE= 40(Min)@ IC= 500mA
• Complement to Type BD952
APPLICATIONS
• Designed for power amplifier and switching applications
Número de pieza
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