Darlington Complementary Silicon Power Transistors

This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications.

FEATUREs
• High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc.
• Collector Emitter Sustaining Voltage @ 30 mAdc:
   VCEO(sus) = 80 Vdc (min) − BDW46
   100 Vdc (min) − BDW42/BDW47
• Low Collector Emitter Saturation Voltage
   VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc
   3.0 Vdc (max) @ IC = 10.0 Adc
• Monolithic Construction with Built−In Base Emitter Shunt resistors
• TO−220 Compact Package
• These Devices are Pb−Free and are RoHS Compliant*