General description
Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1217WR is encapsulated in the SOT343R plastic package.

FEATUREs and benefits
■ Excellent low frequency noise performance
■ Superior cross modulation performance during AGC
■ High forward transfer admittance
■ High forward transfer admittance to input capacitance ratio

APPLICATIONs
■ Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage
    ◆ digital and analog television tuners
    ◆ professional communication equipment