DESCRIPTION
NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.

FEATURES
• Very high power gain
• Low noise figure
• High transition frequency
• Emitter is thermal lead
• Low feedback capacitance.

APPLICATIONS
• RF front end
• Wideband applications, e.g. analog and digital cellular
   telephones, cordless telephones (PHS, DECT, etc.)
• Radar detectors
• Pagers
• Satellite television tuners (SATV)
• High frequency oscillators.