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BFP640H6327 Hoja de datos - Infineon Technologies

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Número de pieza
BFP640H6327

componentes Descripción

Other PDF
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page
10 Pages

File Size
150.2 kB

Fabricante
Infineon
Infineon Technologies Infineon

NPN Silicon Germanium RF Transistor

• High gain low noise RF transistor
• Provides outstanding performance
   for a wide range of wireless applications
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.65 dB at 1.8 GHz
   Outstanding noise figure F = 1.2 dB at 6 GHz
• High maximum stable gain
   Gms = 24 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 70 GHz fT-Silicon Germanium technology
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101


Número de pieza
componentes Descripción
PDF
Fabricante
NPN Silicon Germanium RF Transistor ( Rev : 2004 )
Ver
Infineon Technologies
NPN Silicon Germanium RF Transistor
Ver
Infineon Technologies
NPN SILICON GERMANIUM RF TRANSISTOR
Ver
NEC => Renesas Technology
NPN Silicon Germanium RF Transistor* ( Rev : 2004 )
Ver
Infineon Technologies
NPN Silicon Germanium RF Transistor* ( Rev : 2007 )
Ver
Infineon Technologies
NPN Silicon Germanium RF Transistor*
Ver
Infineon Technologies
NPN Silicon Germanium RF Transistor ( Rev : 2008 )
Ver
Infineon Technologies
NPN Silicon Germanium RF Transistor
Ver
Infineon Technologies
NPN SILICON GERMANIUM RF TRANSISTOR
Ver
Renesas Electronics
NPN SILICON GERMANIUM RF TRANSISTOR
Ver
Renesas Electronics

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