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BLC9G20LS-120V Hoja de datos - NXP Semiconductors.

BLC9G20LS-120V image

Número de pieza
BLC9G20LS-120V

componentes Descripción

Other PDF
  no available.

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page
14 Pages

File Size
180.3 kB

Fabricante
NXP
NXP Semiconductors. NXP

General description
120 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.


FEATUREs and benefits
■ Excellent ruggedness
■ High efficiency
■ Low thermal resistance providing excellent thermal stability
■ Decoupling leads to enable improved video bandwidth performance (75 MHz typical)
■ Designed for broadband operation (1805 MHz to 1995 MHz)
■ Lower output capacitance for improved performance in Doherty applications
■ Designed for low memory effects providing excellent pre-distortability
■ Internally matched for ease of use
■ Integrated ESD protection
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)


APPLICATIONs
■ RF power amplifiers for base stations and multi carrier applications in the
   1805 MHz to 1995 MHz frequency range


Número de pieza
componentes Descripción
PDF
Fabricante
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