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BLF10M6200 Hoja de datos - NXP Semiconductors.

BLF10M6200 image

Número de pieza
BLF10M6200

componentes Descripción

Other PDF
  no available.

PDF
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page
12 Pages

File Size
243.5 kB

Fabricante
NXP
NXP Semiconductors. NXP

General description
200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz.


FEATUREs and benefits
■ Easy power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (700 MHz to 1000 MHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
   (RoHS)


APPLICATIONs
■ RF power amplifiers for ISM applications in the 700 MHz to 1000 MHz frequency
   range


Número de pieza
componentes Descripción
PDF
Fabricante
Power LDMOS transistor
Ver
NXP Semiconductors.
Power LDMOS transistor
Ver
NXP Semiconductors.
Power LDMOS transistor
Ver
NXP Semiconductors.
Power LDMOS transistor
Ver
Ampleon
Power LDMOS transistor ( Rev : 2012 )
Ver
NXP Semiconductors.
Power LDMOS transistor
Ver
NXP Semiconductors.
Power LDMOS transistor ( Rev : 2012 )
Ver
NXP Semiconductors.
Power LDMOS transistor
Ver
NXP Semiconductors.
Power LDMOS transistor
Ver
Ampleon
Power LDMOS transistor
Ver
NXP Semiconductors.

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