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BLF6G10-45 Hoja de datos - NXP Semiconductors.

BLF6G10-45 image

Número de pieza
BLF6G10-45

componentes Descripción

Other PDF
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page
11 Pages

File Size
120.4 kB

Fabricante
NXP
NXP Semiconductors. NXP

General description
45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.


FEATUREs
■ Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 350 mA:
    ◆ Average output power = 1.0 W
    ◆ Gain = 22.5 dB
    ◆ Efficiency = 7.8 %
    ◆ ACPR = −48.5 dBc
■ Easy power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (700 MHz to 1000 MHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)


APPLICATIONs
■ RF power amplifiers for W-CDMA base stations and multi carrier applications in the 700 MHz to 1000 MHz frequency range.


Número de pieza
componentes Descripción
PDF
Fabricante
Power LDMOS transistor
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