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BLF8G10LS-270 Hoja de datos - NXP Semiconductors.

BLF8G10LS-270 image

Número de pieza
BLF8G10LS-270

componentes Descripción

Other PDF
  no available.

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page
12 Pages

File Size
225.5 kB

Fabricante
NXP
NXP Semiconductors. NXP

General description
270 W LDMOS power transistor for base station applications at frequencies from 820 MHz to 960 MHz.


FEATUREs and benefits
■ Excellent ruggedness
■ High efficiency
■ Low Rth providing excellent thermal stability
■ Designed for broadband operation (820 MHz to 960 MHz)
■ Lower output capacitance for improved performance in Doherty applications
■ Designed for low memory effects providing excellent pre-distortability
■ Internally matched for ease of use
■ Integrated ESD protection
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)


APPLICATIONs
■ RF power amplifiers for W-CDMA base stations and multi carrier applications in the
   820 MHz to 960 MHz frequency range


Número de pieza
componentes Descripción
PDF
Fabricante
Power LDMOS transistor
Ver
NXP Semiconductors.
Power LDMOS transistor
Ver
NXP Semiconductors.
Power LDMOS transistor
Ver
NXP Semiconductors.
Power LDMOS transistor
Ver
Ampleon
Power LDMOS transistor ( Rev : 2012 )
Ver
NXP Semiconductors.
Power LDMOS transistor
Ver
NXP Semiconductors.
Power LDMOS transistor ( Rev : 2012 )
Ver
NXP Semiconductors.
Power LDMOS transistor
Ver
NXP Semiconductors.
Power LDMOS transistor
Ver
Ampleon
Power LDMOS transistor
Ver
NXP Semiconductors.

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