General description
170 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 1990 MHz.

FEATUREs and benefits
■ Excellent ruggedness
■ High efficiency
■ Low thermal resistance providing excellent thermal stability
■ Decoupling leads to enable improved video bandwidth (100 MHz typical)
■ Lower output capacitance for improved performance in Doherty applications
■ Designed for low memory effects providing excellent pre-distortability
■ Internally matched for ease of use
■ Integrated ESD protection
■ Integrated current sense
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

APPLICATIONs
■ RF power amplifier for W-CDMA base stations and multi carrier applications in the
   1800 MHz to 1990 MHz frequency range