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BLF8G20LS-200V Hoja de datos - NXP Semiconductors.

BLF8G20LS-200V image

Número de pieza
BLF8G20LS-200V

componentes Descripción

Other PDF
  no available.

PDF
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page
14 Pages

File Size
214.8 kB

Fabricante
NXP
NXP Semiconductors. NXP

General description
200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.


FEATUREs and benefits
■ Excellent ruggedness
■ High efficiency
■ Low Rth providing excellent thermal stability
■ Decoupling leads to enable improved video bandwidth (80 MHz typical)
■ Designed for low memory effects providing excellent pre-distortability
■ Internally matched for ease of use
■ Integrated ESD protection
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)


APPLICATIONs
■ RF power amplifiers for W-CDMA base stations and multi carrier applications in the
   1800 MHz to 2000 MHz frequency range


Número de pieza
componentes Descripción
PDF
Fabricante
Power LDMOS transistor
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