DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the flange.

FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Source on mounting base eliminates DC isolators,
   reducing common mode inductance.

APPLICATIONS
• L-band radar applications in the 1200 to 1400 MHz
   frequency range.