General description
80 W LDMOS transistor for base station applications at frequencies from 1800 MHz to 2200 MHz.

FEATUREs and benefits
■ Designed for broadband operation (1800 MHz to 2200 MHz)
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Internally matched for ease of use
■ High power gain
■ Integrated ESD protection
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

APPLICATIONs
■ RF power amplifiers for base station and multi-carrier applications in the 1800 MHz to
   2200 MHz frequency range