DESCRIPTION
N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f. and v.h.f. bands, with a nominal supply voltage of 28 V. The transistor is specified for s.s.b. applications as linear amplifier in class-A and AB. The device is resistance stabilized and is guaranteed to withstand severe load mismatch conditions.
Matched hFE groups are available on request.
It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.