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BR34E02NUX-3 Hoja de datos - ROHM Semiconductor

BR34E02FVT-3 image

Número de pieza
BR34E02NUX-3

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page
20 Pages

File Size
409.7 kB

Fabricante
ROHM
ROHM Semiconductor ROHM

●Description
BR34E02-3 Series is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect)


●Features
1) 256×8 bit architecture serial EEPROM
 2)  Wide operating voltage range: 1.7V-5.5V
 3)  Two-wire serial interface
 4)  Self-Timed Erase and Write Cycle
 5)  Page Write Function (16byte)
 6)  Write Protect Mode
  Settable Reversible Write Protect Function: 00h-7Fh
  Write Protect 1 (Onetime Rom)      : 00h-7Fh
  Write Protect 2 (Hardwire WP PIN)   : 00h-FFh
 7)  Low Power consumption 
  Write  (at 1.7V )  : 0.4mA (typ.)
  Read  (at 1.7V )  : 0.1mA(typ.)
  Standby   ( at 1.7V )  : 0.1µA(typ.)
8) DATA security
  Write protect feature (WP pin)
  Inhibit to WRITE at low VCC
 9)  Compact package: TSSOP-B8, VSON008X2030
 10)  High reliability fine pattern CMOS technology
 11)  Rewriting possible up to 1,000,000 times
 12)  Data retention: 40 years
 13)  Noise reduction Filtered inputs in SCL / SDA  
 14)  Initial data FFh at all addresses

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