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BR34E02NUX-3R Hoja de datos - ROHM Semiconductor

BR34E02-3 image

Número de pieza
BR34E02NUX-3R

Other PDF
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PDF
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page
33 Pages

File Size
777.4 kB

Fabricante
ROHM
ROHM Semiconductor ROHM

General Description
BR34E02-3 is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect)


FEATUREs
256×8 bit Architecture Serial EEPROM
Wide Operating Voltage Range: 1.7V to 5.5V
Two-Wire Serial Interface
Self-Timed Erase and Write Cycle
Page Write Function (16byte)
Write Protect Mode
 Settable Reversible Write Protect Function : 00h-7Fh
 Write Protect 1 (Onetime Rom)  : 00h-7Fh
 Write Protect 2 (Hardwire WP PIN)  : 00h-FFh
Low Power consumption
 Write  (at 1.7V)  :  0.4mA (typ)
 Read  (at 1.7V)  :  0.1mA (typ)
 Standby  (at 1.7V)  :  0.1µA (typ)
Prevention of Write Mistake
 Write Protect Feature (WP pin)
 Prevention of Write Mistake at Low Voltage
High Reliability Fine Pattern CMOS Technology
More than 1 million write cycles
More than 40 years data retention
Noise Reduction Filtered Inputs in SCL / SDA
Initial delivery state FFh

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Número de pieza
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Ver
ROHM Semiconductor
Serial EEPROM series Standard EEPROM I2C BUS EEPROM (2-Wire) ( Rev : 2013 )
Ver
ROHM Semiconductor
Serial EEPROM series Standard EEPROM I2C BUS EEPROM (2-Wire)
Ver
ROHM Semiconductor
Serial EEPROM Series Standard EEPROM I2C BUS EEPROM (2-Wire) ( Rev : 2013 )
Ver
ROHM Semiconductor

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