DESCRIPTION
The BS616LV1611 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,576 words by 16 bits and operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 3.0uA at 3V/25oC and maximum access time of 55ns at 3.0V/85°C.

FEATURES
• Wide Vcc operation voltage : 2.4~5.5V
• Very low power consumption :
    Vcc = 3.0V C-grade: 45mA (@55ns) operating current
                      I -grade: 46mA (@55ns) operating current
                      C-grade: 36mA (@70ns) operating current
                      I -grade: 37mA (@70ns) operating current
                      3.0uA (Typ.) CMOS standby current
    Vcc = 5.0V C-grade: 113mA (@55ns) operating current
                      I -grade: 115mA (@55ns) operating current
                      C-grade: 90mA (@70ns) operating current
                      I -grade: 92mA (@70ns) operating current
                      15uA (Typ.) CMOS standby current
• High speed access time :
    -55 55ns
    -70 70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2,CE1 and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin