DESCRIPTION
The BS616LV1611 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,576 by 16 bits and operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with maximum CMOS standby current of 16/100uA at Vcc=3/5V at 85OC and maximum access time of 55/70ns.

FEATURES
• Wide VCC operation voltage : 2.4V ~ 5.5V
• Very low power consumption :
    VCC = 3.0V Operation current : 46mA (Max.) at 55ns
                                                       2mA (Max.) at 1MHz
                        Standby current : 16uA (Max.) at 85 °C
    VCC = 5.0V Operation current : 115mA (Max.) at 55ns
                                                       10mA (Max.) at 1MHz
                        Standby current : 100uA (Max.) at 85°C
• High speed access time :
    -55 55ns(Max.) at VCC=3.0~5.5V
    -70 70ns(Max.) at VCC=2.7~5.5V
• Automatic power down when chip is deselected
• Easy expansion with CE2, CE1 and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin.
• Three state outputs and TTL compatible
• Fully static operation, no clock, no refresh
• Data retention supply voltage as low as 1.5V