DESCRIPTION
The BS616LV2019 is a high performance , very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a range of 2.7V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.3uA at 3.0V/25oC and maximum access time of 55ns at 2.7V/ 85°C.

FEATURES
• Vcc operation voltage range : 2.7V ~ 3.6V
• Very low power consumption :
    Vcc = 3.0V C-grade: 23mA (@55ns) operating current
                       I -grade: 25mA (@55ns) operating current
                       C-grade: 15mA (@70ns) operating current
                       I -grade: 16mA (@70ns) operating current
                       0.3uA(Typ.) CMOS standby current
• High speed access time :
    -55 55ns
    -70 70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin