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BS62LV4008 image

Número de pieza
BS62LV4008

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10 Pages

File Size
367.6 kB

Fabricante
BSI
Brilliance Semiconductor BSI

DESCRIPTION
The BS62LV4008 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a range of 2.4V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.45uA at 3.0V/25oC and maximum access time of 55ns at 3.0V/85°C.


FEATURES
• Vcc operation voltage : 2.4V ~ 3.6V
• Very low power consumption :
    Vcc = 3.0V C-grade: 29mA (@55ns) operating current
                       I -grade: 30mA (@55ns) operating current
                       C-grade: 24mA (@70ns) operating current
                       I -grade: 25mA (@70ns) operating current
                       0.45uA (Typ.) CMOS standby current
• High speed access time :
    -55 55ns
    -70 70ns
• Automatic power down when chip is deselected
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• Three state outputs and TTL compatible

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Número de pieza
componentes Descripción
PDF
Fabricante
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Ver
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Ver
Brilliance Semiconductor
Very Low Power CMOS SRAM 512K X 8 bit
Ver
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Ver
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Ver
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Ver
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Ver
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K X 16 bit ( Rev : 2004 )
Ver
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Ver
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Ver
Brilliance Semiconductor

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