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BS62UV2006DCP10 Hoja de datos - Brilliance Semiconductor

BS62UV2006 image

Número de pieza
BS62UV2006DCP10

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9 Pages

File Size
314.3 kB

Fabricante
BSI
Brilliance Semiconductor BSI

DESCRIPTION
The BS62UV2006 is a high performance, ultra low power CMOS Static Random Access Memory organized as 262,144 words by 8 bits and operates from a wide range of 1.8V to 3.6V supply voltage.


FEATURES
• Wide Vcc operation voltage :
    C-grade: 1.8V~3.6V
    I-grade: 1.9V~3.6V
    (Vcc_min.=1.65V at 25oC)
• Ultra low power consumption :
    Vcc = 2.0V C-grade : 8mA (Max.) operating current
                       I- grade : 10mA (Max.) operating current
                       0.20uA (Typ.) CMOS standby current
    Vcc = 3.0V C-grade : 11mA (Max.) operating current
                       I- grade : 13mA (Max.) operating current
                       0.30uA (Typ.) CMOS standby current
• High speed access time :
    -85 85ns (Max.)
    -10 100ns (Max.)
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation

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