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BTS307(2003) Hoja de datos - Infineon Technologies

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BTS307

componentes Descripción

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12 Pages

File Size
257.1 kB

Fabricante
Infineon
Infineon Technologies Infineon

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS®  technology. Providing embedded protective functions.


FEATUREs
● Overload protection
● Current limitation
● Short circuit protection
● Thermal shutdown
● Overvoltage protection
● Fast demagnetization of inductive loads
● Reverse battery protection1)
● Open drain diagnostic output
● Open load detection in OFF-state
● CMOS compatible input
● Loss of ground and loss of Vbb protection
● Electrostatic discharge (ESD) protection


APPLICATION
● μC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
● Most suitable for inductive loads
● Replaces electromechanical relays, fuses and discrete circuits

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