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BTS542E2 Hoja de datos - Infineon Technologies

BTS542E2 image

Número de pieza
BTS542E2

componentes Descripción

Other PDF
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PDF
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page
13 Pages

File Size
211.5 kB

Fabricante
Infineon
Infineon Technologies Infineon

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions.


FEATUREs
● Overload protection
● Current limitation
● Short-circuit protection
● Thermal shutdown
● Overvoltage protection (including load dump)
● Fast demagnetization of inductive loads
● Reverse battery protection1)
● Undervoltage and overvoltage shutdown with auto-restart and hysteresis
● Open drain diagnostic output
● Open load detection in ON-state
● CMOS compatible input
● Loss of ground and loss of Vbb protection2)
● Electrostatic discharge (ESD) protection


APPLICATION
● μC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
● All types of resistive, inductive and capacitve loads
● Replaces electromechanical relays and discrete circuits

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Número de pieza
componentes Descripción
PDF
Fabricante
Smart Highside Power Switch
Ver
Siemens AG
Smart Highside Power Switch
Ver
Siemens AG
Smart Highside Power Switch ( Rev : 2003 )
Ver
Infineon Technologies
Smart Highside Power Switch
Ver
Infineon Technologies
Smart Highside Power Switch
Ver
Siemens AG
Smart Highside Power Switch
Ver
Infineon Technologies
Smart Highside Power Switch
Ver
Siemens AG
Smart Highside Power Switch
Ver
Siemens AG
Smart Highside Power Switch
Ver
Infineon Technologies
Smart Highside Power Switch
Ver
Siemens AG

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