DESCRIPTION
2SC1970, C1970 is a silicon NPN epitaxial planar transistor designed for RF power amplifiers on VHF band mobile radio applications.

FEATURES
● High power gain: Gpe ≥ 9.2dB
   @VCC = 13.5V, PO = 1W, f = 175MHz
● Emitter ballasted construction, gold metallization for high
   reliability and good performances.
● TO-220 package similarly is combinient for mounting

APPLICATION
   0.8 to 1 watts output power amplifiers and driver in VHF band mobile radio applications