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C4881 Hoja de datos - Toshiba

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C4881

componentes Descripción

TOSHIBA Transistor Silicon NPN Epitaxial Type

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1997

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page

4 Pages

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119.6 kB

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Toshiba

Toshiba

High-Current Switching Applications

• Low saturation voltage: VCE (sat)= 0.4 V (max)
• High-speed switching: tstg= 0.8 µs (typ.)

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Número de pieza

componentes Descripción

PDF

Fabricante

TOSHIBA Transistor Silicon NPN Epitaxial Type

Toshiba

TOSHIBA Transistor Silicon NPN Epitaxial Type

Toshiba

TOSHIBA Transistor Silicon NPN Epitaxial Type

Toshiba

TOSHIBA Transistor Silicon NPN Epitaxial Type

Toshiba

TOSHIBA Transistor Silicon NPN Epitaxial Type

Toshiba

TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2009 )

Toshiba

TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2002 )

Toshiba

TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2010 )

Toshiba

TOSHIBA Transistor Silicon NPN Epitaxial Type

Toshiba

TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2013 )

Toshiba

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