NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD

FEATURES
• High gain: S21e2 = 10 dB TYP. @ VCE = 5 V, IC = 50 mA, f = 1 GHz
• Low distortion, low voltage: IM2 = −55 dB TYP., IM3 = −76 dB TYP. @ VCE = 5 V, IC = 50 mA, Vin = 105 dBµV/75Ω
• 4-pin power minimold package with improved gain from the 2SC4703