CED12N10L - VBsemi Electronics Co.,Ltd Hoja de datos - DataSheetBank

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CED12N10L Hoja de datos - VBsemi Electronics Co.,Ltd

CED12N10L image

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CED12N10L

componentes Descripción

N-Channel 100 V (D-S) MOSFET

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page

7 Pages

File Size

877.8 kB

Fabricante

VBsemi Electronics Co.,Ltd

VBSEMI

FEATURES
• DT-TrenchPower MOSFET
• 175 °C Junction Temperature
• 100 % Rg Tested

APPLICATIONS
• Primary Side Switch

Número de pieza

componentes Descripción

PDF

Fabricante

N-Channel 100-V (D-S) MOSFET

VBsemi Electronics Co.,Ltd

N-Channel 100-V (D-S) MOSFET

Unspecified

N-Channel 100-V (D-S) MOSFET

VBsemi Electronics Co.,Ltd

N-Channel 100-V (D-S) MOSFET

VBsemi Electronics Co.,Ltd

N-Channel 100-V (D-S) MOSFET

Vishay Semiconductors

N-Channel 100-V (D-S) MOSFET ( Rev : 2003 )

Vishay Semiconductors

N-Channel 100-V (D-S) MOSFET

Analog Power

N-Channel 100-V (D-S) MOSFET

VBsemi Electronics Co.,Ltd

N-Channel 100-V (D-S) MOSFET

VBsemi Electronics Co.,Ltd

N-Channel 100-V (D-S) MOSFET

VBsemi Electronics Co.,Ltd

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