Fabricante
![NXP](/logo/NXP.png)
NXP Semiconductors.
![NXP](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Heterojunction Field Effect Transistor (HFET) GaAs dies.
FEATUREs
■ Excellent linearity, stability and reliability
■ Extremely low noise
■ Excellent return loss properties
■ Rugged construction
■ Unconditionally stable
■ Thermally optimized design
■ Superior levels of ESD protection
■ Compliant to Directive 2002/95/EC, regarding Restriction of the use of certain Hazardous Substances (RoHS)
■ Integrated ring wave surge protection
APPLICATIONs
■ CATV systems operating in the 40 MHz to 1003 MHz frequency range
Número de pieza
componentes Descripción
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