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CM1231-02SO image

Número de pieza
CM1231-02SO

Other PDF
  2011  

PDF
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page
12 Pages

File Size
303.4 kB

Fabricante
ON-Semiconductor
ON Semiconductor ON-Semiconductor

Product Description
The CM1231−02SO is specifically designed for next generation deep submicron ASIC protection. These devices are ideal for protecting systems with high data and clock rates and for circuits requiring low capacitive loading such as USB 2.0.


FEATUREs
• Two Channels of ESD Protection
• Exceeds ESD Protection to IEC61000−4−2 Level 4:
    • ±12 kV Contact Discharge (OUT Pins)
• Two−Stage Matched Clamp Architecture
• Matching−of−Series Resistor (R) of ±10 m Typical
• Flow−Through Routing for High−Speed Signal Integrity
• Differential Channel Input Capacitance Matching of 0.02 pF Typical
• Improved Powered ASIC Latchup Protection
• Dramatic Improvement in ESD Protection vs. Best in Class Single−Stage Diode Arrays
    • 40% Reduction in Peak Clamping Voltage
    • 40% Reduction in Peak Residual Current
• Withstands over 1000 ESD Strikes*
• Available in a SOT23−6 Package
• These Devices are Pb−Free and are RoHS Compliant


APPLICATIONs
• USB Devices Data Port Protection
• General High−Speed Data Line ESD Protection

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