CP285 Hoja de datos - Central Semiconductor
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CP285
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Central Semiconductor
PROCESS DETAILS
Die Size 105 x 105 MILS
Die Thickness 9.5 MILS
Base Bonding Pad Area 32 x 22 MILS
Emitter Bonding Pad Area 33 x 24 MILS
Top Side Metalization Al - 45,000Å
Back Side Metalization Ti/Ni/Ag - (3000Å, 10,000Å, 10,000Å)
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