CP289 Hoja de datos - Central Semiconductor
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CP289
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Central Semiconductor
PROCESS DETAILS
Die Size 167 x 167 MILS
Die Thickness 9.5 MILS
Base Bonding Pad Area 59 x 29 MILS
Emitter Bonding Pad Area 64 x 28 MILS
Top Side Metalization Al - 45,000Å
Back Side Metalization Ti/Ni/Ag - 3,000Å, 10,000Å, 10,000Å
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Power Transistors NPN - High Current Transistor Chip ( Rev : 2006 )
Central Semiconductor
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