CP309 Hoja de datos - Central Semiconductor
Número de pieza
CP309
componentes Descripción
Other PDF
PDF
page
2 Pages
File Size
463.8 kB
Fabricante
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 41.3 x 41.3 MILS
Die Thickness 9.0 MILS
Base Bonding Pad Area 9.4 x 9.2 MILS
Emitter Bonding Pad Area 12.8 x 10.2 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Ag - 12,000Å
Número de pieza
componentes Descripción
PDF
Fabricante
Power Transistor PNP - Low Saturation Transistor Chip ( Rev : 2006 )
Central Semiconductor
Share Link: