The CP336V-2N5551 is a silicon NPN transistor designed for high voltage, general purpose applications.

MECHANICAL SPECIFICATIONS:

   Die Size 17.3 x 17.3 MILS
   Die Thickness 7.1 MILS
   Base Bonding Pad Size 3.9 x 3.9 MILS
   Emitter Bonding Pad Size 3.9 x 3.9 MILS
   Top Side Metalization Al-Si – 17,000Å
   Back Side Metalization Au – 9,000Å
   Scribe Alley Width 1.8 MILS
   Wafer Diameter 5 INCHES
   Gross Die Per Wafer 57,735