CP353V(2005) Hoja de datos - Central Semiconductor
Número de pieza
CP353V
componentes Descripción
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1 Pages
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Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 66 x 66 MILS
Die Thickness 7.1 MILS
Base Bonding Pad Area 7.9 x 7.9 MILS
Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS
Emitter 2 Bonding Pad Area 7.9 x 9.5 MILS
Top Side Metalization Al-Si 30,000Å
Back Side Metalization Au 12,000Å
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componentes Descripción
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