CP357X-CMLDM3737 Hoja de datos - Central Semiconductor
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CP357X-CMLDM3737
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Central Semiconductor
The CP357X-CMLDM3737 is a silicon N-Channel MOSFET designed for high speed pulsed amplifi er and driver applications.
MECHANICAL SPECIFICATIONS:
Die Size 22 x 17 MILS
Die Thickness 5.5 MILS
Gate Bonding Pad Size 3.5 x 3.5 MILS
Source Bonding Pad Size 14.5 x 19.4 MILS
Top Side Metalization Al-Si – 35,000Å
Back Side Metalization Au – 9,000Å
Scribe Alley Width 1.97 MILS
Wafer Diameter 6 INCHES
Gross Die Per Wafer 63,845
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6.5A 20V Dual Die N-Channel ESD Protected Enhancement-Mode MOSFET
First Components International
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