CP382X Hoja de datos - Central Semiconductor
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CP382X
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Central Semiconductor
PROCESS DETAILS
Die Size 26 x 26 MILS
Die Thickness 5.9 MILS
Base Bonding Pad Area 5.5 x 5.5 MILS
Emitter Bonding Pad Area 5.5 x 5.5 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 12,000Å
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Small Signal Transistors NPN - Low VCE(SAT) Transistor Chip ( Rev : 2006 )
Central Semiconductor
Small Signal Transistors PNP - Low VCE(SAT) Transistor Chip ( Rev : 2006 )
Central Semiconductor
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