CP630(2005) Hoja de datos - Central Semiconductor
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CP630
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PROCESS DETAILS
Process EPITAXIAL BASE
Die Size 80 X 80 MILS
Die Thickness 8 MILS
Base Bonding Pad Area 18 X 27 MILS
Emitter Bonding Pad Area 34 X 34 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Ti/Pd/Ag (20,000Å)
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Power Transistors NPN - Silicon Darlington Transistor Chip ( Rev : 2005 )
Central Semiconductor
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