CP707(2002) Hoja de datos - Central Semiconductor
Número de pieza
CP707
componentes Descripción
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2 Pages
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209.7 kB
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Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 27 x 27 MILS
Die Thickness 9.0 MILS
Base Bonding Pad Area 5.3 x 3.8 MILS
Emitter Bonding Pad Area 5.3 x 6.5 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 18,000Å
Número de pieza
componentes Descripción
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