CP712 Hoja de datos - Central Semiconductor
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CP712
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Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 75 x 75 MILS
Die Thickness 9.0 MILS
Base Bonding Pad Area 17 x 12 MILS
Emitter Bonding Pad Area 31 x 12 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Ti/Ni/Ag - 11,300Å
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