CP716 Hoja de datos - Central Semiconductor
Número de pieza
CP716
componentes Descripción
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2 Pages
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208.3 kB
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Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 20 x 20 MILS
Die Thickness 9.0 MILS
Base Bonding Pad Area 4.0 x 4.0 MILS
Emitter Bonding Pad Area 4.7 x 4.7 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 18,000Å
Número de pieza
componentes Descripción
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Fabricante
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Central Semiconductor
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Small Signal Transistors PNP - High Voltage Transistor Chip ( Rev : 2005 )
Central Semiconductor
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