CPD102X Hoja de datos - Central Semiconductor
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CPD102X
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2 Pages
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Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 9.0 x 9.0 MILS
Die Thickness 5.9 MILS
Anode Bonding Pad Area 4.8 MILS DIAMETER
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 12,000Å
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Schottky Diode Silicon High Current Schottky Diode Chip ( Rev : 2006 )
Central Semiconductor
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